SI9945AEY-T1-GE3 datasheet
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О ДАТАШИТЕ
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МаркировкаSI9945AEY-T1-GE3
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ПроизводительVishay Intertechnology
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ОписаниеVishay Intertechnology SI9945AEY-T1-GE3 Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 3.7 A Resistance Drain-Source RDS (on): 80 mOhms Configuration: Dual Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Fall Time: 8 ns Forward Transconductance gFS (Max / Min): 11 S Gate Charge Qg: 20 nC Minimum Operating Temperature: - 55 C Power Dissipation: 2.4 W Rise Time: 10 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 21 ns Part # Aliases: SI9945AEY-GE3
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Количество страниц8 шт.
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Форматы файлаHTML, PDF
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